Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent memory solutions, announced today that it is expanding its flagship industrial, high-density STT-MRAM product family, the EMxxLX. The EMxxLX product, announced last year, is the highest-performing persistent memory available today. It is ideal for electronic systems where data persistence and integrity, low power, low latency, and security are paramount, such as industrial IoT, network/enterprise infrastructure, process automation and control, aeronautics/avionics, medical, gaming, and FPGA configuration.
The industry’s first xSPI serial interface based on Everspin’s unique STT-MRAM technology is the only commercially available persistent memory with full read and write bandwidth of 400 megabytes per second via eight I/O signals with a clock frequency of 200MHz. The new extended EMxxLX family of devices delivers the highest combination of performance, endurance, and retention and is now available in densities from 4 to 64 megabits with new, smaller packaging for the 4-to-16-megabit products. The new 5mm x 6mm DFN package is an area savings of 37% over the existing offering. In addition to the new capacity and smaller packaging, Everspin is delivering an extended temperature range in the EMxxLX products of -40⁰C to 105⁰C. The EMxxLX family can replace alternative solutions, such as SRAM, BBSRAM, FRAM, NVSRAM, and NOR flash devices.
“In the fast-growing Industrial IoT and embedded systems markets, customers, more than ever, need to protect critical system data under all conditions, particularly in the event of power loss and without concern for wear out or data integrity issues,” emphasized Sanjeev Aggarwal, President, and CEO of Everspin Technologies. “That’s why we are proud to announce the expansion of our EMxxLX MRAM product line, now featuring not only SRAM-like performance with low latency and the ability to maintain memory without requiring power but also an extended temperature range to cater to diverse environmental demands. With the addition of a 4Mb capacity option, our MRAM devices provide even more options to select the optimal density solutions. They continue to deliver extremely high endurance, remain compatible with other memory types, and offer ease of integration into customers’ designs.”30